SI4800BDY-T1-E3

n-channel reduced qg, fast switching mosfet, 40 A, 1.3 W, 30 V, SOP

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Price:: US $0.15~2.40 / piece [Get Latest Price]

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	US $0.15~2.40

PartNumber:: SI4800BDY-T1-E3

Brand:: Vishay Siliconix - Vishay | Pack: SOP | D/C: 12+

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Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-10-09

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Product Summary

The SI4800BDY-T1-E3 is a n-channel reduced qg, fast switching mosfet.

Parametrics

SI4800BDY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate Source Voltage VGS: ± 25V; (3)Continuous Drain Current (TJ = 150 ℃)a, b TA = 25 ℃ ID: 9, 6.5 A; (4)Pulsed Drain Current (10 Us Pulse Width)IDM: 40A; (5)Continuous Source Current (Diode Conduction)a, b IS: 2.3A; (6)Single-Pulse Avalanche Energy EAS 11.25 mJ; (7)Maximum Power Dissipationa, b TA = 25 ℃ PD: 2.5, 1.3 W.

Features

SI4800BDY-T1-E3 features: (1)Halogen-free According to IEC 61249-2-21 Available; (2)TrenchFET Power MOSFET; (3)High Efficient PWM Optimized; (4)100 % UIS and Rg Tested.