(Hong Kong)
Product Summary
The SPA11N80C3 is a cool MOS power transistor.
Parametrics
SPA11N80C3 absolute maximum ratings: (1)Continuous drain current, TC = 25℃, ID: 11A; TC = 100℃, ID: 7.1A; (2)Pulsed drain current, tp limited by Tjmax, IDpuls: 33A; (3)Avalanche energy, single pulse, ID = 10A, VDD = 50V, EAS: 470mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax2), ID = 20A, VDD = 50V, EAR: 0.2mj; (5)Avalanche current, repetitive tAR limited by Tjmax, IAR: 11A; (6)Gate source voltage, VGS: ±20 V; (7)Gate source voltage AC (f >1Hz), VGS: ±30V; (8)Power dissipation, TC = 25℃, Ptot: 41W; (9) Operating and storage temperature, Tj , Tstg: -55 to +150℃.
Features
SPA11N80C3 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)Ultra low effective capacitances; (6)Improved transconductance; (7)P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute).
Diagrams
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 SPA11N80C3 |
Infineon Technologies |
MOSFET MOSFET N-Channel |
Data Sheet |
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SPA11N80C3 |
Infineon Technologies |
MOSFET MOSFET N-Channel |
Data Sheet |
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Data Sheet |
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