Product Summary

The SPA12N50C3 is a cool MOS power transistor.

Parametrics

SPA12N50C3 absolute maximum ratings: (1)Continuous drain current, TC = 25℃, ID: 11.6A; TC = 100℃, ID: 7A; (2)Pulsed drain current, tp limited by Tjmax, IDpuls: 34.8A; (3)Avalanche energy, single pulse, ID = 10A, VDD = 50V, EAS: 340mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax2), ID = 20A, VDD = 50V, EAR: 0.6mj; (5)Avalanche current, repetitive tAR limited by Tjmax, IAR: 11.6A; (6)Gate source voltage, VGS: ±20 V; (7)Gate source voltage AC (f >1Hz), VGS: ±30V; (8)Power dissipation, TC = 25℃, Ptot: 33 W; (9) Operating and storage temperature, Tj , Tstg: -55 to +150℃.

Features

SPA12N50C3 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)Ultra low effective capacitances; (6)Improved transconductance; (7)P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute).

Diagrams

SPA12N50C3 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
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Data Sheet
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1-10: $1.47
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100-250: $0.98
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