Product Summary
The SPP03N60C3 is a cool MOS power transistor.
Parametrics
SPP03N60C3 absolute maximum ratings: (1)Continuous drain current, TC = 25℃, ID: 3.2A; TC = 100℃, ID: 2A; (2)Pulsed drain current, tp limited by Tjmax, IDpuls: 9.6A; (3)Avalanche energy, single pulse, ID = 8, VDD = 50V, EAS: 100mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax2), ID = 16A, VDD = 50V, EAR: 0.2mj; (5)Avalanche current, repetitive tAR limited by Tjmax, IAR: 3.2A; (6)Gate source voltage, VGS: ±20 V; (7)Gate source voltage AC (f >1Hz), VGS: ±30V; (8)Power dissipation, TC = 25℃, Ptot: 38W; (9)Operating and storage temperature, Tj, Tstg: -55 to +150℃; (10)Reverse diode dv/dt, dv/dt: 15V/ns.
Features
SPP03N60C3 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)Ultra low effective capacitances; (6)Improved transconductance; (7)PG-TO-220-3-31; -3-111: Fully isolated package (2500 VAC; 1minute); (8)Pb-free lead plating; RoHS compliant; (9)Qualified according to JEDEC for target applications.
Diagrams
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![]() MOSFET COOL MOS N-CH 600V 3.2A |
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