(Hong Kong)
Product Summary
The SPP16N50C3 is a cool MOS power transistor.
Parametrics
SPP16N50C3 absolute maximum ratings: (1)Continuous drain current, TC = 25℃, ID: 16A; TC = 100℃, ID: 10A; (2)Pulsed drain current, tp limited by Tjmax, IDpuls: 48A; (3)Avalanche energy, single pulse, ID = 8, VDD = 50V, EAS: 460mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax2), ID = 16A, VDD = 50V, EAR: 0.64mj; (5)Avalanche current, repetitive tAR limited by Tjmax, IAR: 16A; (6)Gate source voltage, VGS: ±20 V; (7)Gate source voltage AC (f >1Hz), VGS: ±30V; (8)Power dissipation, TC = 25℃, Ptot: 34 W.
Features
SPP16N50C3 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)Ultra low effective capacitances; (6)Improved transconductance; (7)PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1minute); (8)Pb-free lead plating; RoHS compliant; (9)Qualified according to JEDEC for target applications.
Diagrams
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 SPP16N50C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 560V 16A |
Data Sheet |
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