(Hong Kong)
Product Summary
The SPP20N60C3 is a cool MOS power transisitor.
Parametrics
SPP20N60C3 absolute maximum ratings: (1)continuous drain current, id: 20.7A; (2)pulsed drain current, tp limited by tjmax, Idpuls: 62.1A; (3)avalanche energy, single pulse, EAS: 690mJ; (4)avalanche energy, repetitive tar limited by tjmax, EAR: 1mJ; (5)avalanche current, repetitive tar limited by tjmax, IAR: 20A; (6)gate source voltage static, Vgs: ±20V; (7)gate source voltage ac(f> 1hz), Vgs: ±30v; (8)power dissipation, tc = 25℃, Ptot: 208W; (9)operating and storage temperature, Tj, Tstg: -55 to +150℃; (10)reverse diode dv/dt, dv/dt: 15v/ns.
Features
SPP20N60C3 features: (1)New revolutionary high voltage technology; (2)Worldwide best RDS in TO220; (3)Ultra low gate charge; (4)Periodic avalanche rated; (5)Extreme dv/dt rated; (6)High peak current capability; (7)Improved transconductance; (8)PG-TO-220-3-31: fully isolated package(2500VDC; 1minute); (9)Pb-free lead plating; RoHS compliant; (10)Qualified according to JEDEC for target applications.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 SPP20N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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SPP20N60C2 |
Infineon Technologies |
MOSFET N-CH 650V 20A TO-220AB |
Data Sheet |
Negotiable |
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SPP20N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V |
Data Sheet |
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SPP20N60CFD |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V 20.7A |
Data Sheet |
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SPP20N60S5 |
Infineon Technologies |
MOSFET COOL MOS N-CH 600V 20A |
Data Sheet |
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SPP20N65C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V 20.7 |
Data Sheet |
Negotiable |
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SPP20N65C3XKSA1 |
Infineon Technologies |
MOSFET |
Data Sheet |
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