(Hong Kong)
Product Summary
The STP5NK50Z is a Zener-Protected SuperMESH power MOSFET obtained through an extreme optimization of ST well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. The applications of the STP5NK50Z include High current, high speed switching, ideal for off-line power supplies, adaptors and PFC, Lighting.
Parametrics
STP5NK50Z absolute maximum ratings: (1)Drain-source Voltage (VGS = 0), VDS: 500 V; (2)Drain-gate Voltage (RGS = 20 kΩ), VDGR: 500 V; (3)Gate- source Voltage, VGS: ±30 V; (4)Drain Current (continuous) at TC = 25℃, ID: 4.4 A; (5)Drain Current (continuous) at TC = 100℃, ID: 2.7 A; (6)Drain Current (pulsed), IDM: 17.6A; (7)Total Dissipation at TC = 25℃, PTOT: 70W; (8)Derating Factor: 0.56 W/℃; (9)Gate source ESD(HBM-C=100pF, R=1.5KΩ), VESD(G-S): 3000 V; (10)Peak Diode Recovery voltage slope, dv/dt: 4.5 V/ns; (11)Insulation Withstand Voltage (DC), VISO: 2500 V; (12)Operating Junction Temperature, Tj: -55 to 150℃; Storage Temperature, Tstg: -55 to 150℃.
Features
STP5NK50Z features: (1)typical RDS(on) = 1.22 W; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.
Diagrams
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 STP5NK50Z |
STMicroelectronics |
MOSFET N-Ch 500 Volt 4.4 A Zener SuperMESH |
Data Sheet |
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STP5NK50ZFP |
STMicroelectronics |
MOSFET N-Ch, 500V-1.22ohms Zener SuperMESH 4.4 |
Data Sheet |
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