(Hong Kong)
Product Summary
The STW24NM65N is an N-channel second generation MDmesh Power MOSFET. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. The STW24NM65N is therefore suitable for the most demanding high efficiency converters. The application pf the STW24NM65N includes switching applications.
Parametrics
STW24NM65N absolute maximum ratings: (1)Drain-source voltage (VGS = 0), VDS: 650 V; (2)Gate-source voltage, VGS: ±25 V; (3)Drain current (continuous) at TC = 25℃, ID: 19A; (4)Drain current (continuous) at TC = 100℃, ID: 12A; (5)Drain current (pulsed), ID: 76A; (6)Total dissipation at TC = 25℃, PTOT: 160W; (7)Peak diode recovery voltage slope, dv/dt: 15 V/ns; (8)Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1s; TC = 25℃), VISO: 2500 V; (9)Storage temperature, Tstg: -55 to 150℃; (10)Max. operating junction temperature, TJ: 150℃.
Features
STW24NM65N features: (1)100% avalanche tested; (2)Low input capacitance and gate charge; (3)Low gate input resistance.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 STW24NM65N |
STMicroelectronics |
MOSFET N-channel 650V |
Data Sheet |
Negotiable |
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