STW9NK90Z

STW9NK90Z, Zener-Protected SuperMESH Power MOSFET, TO-247, 900V, 8A, STMicroelectronics

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PartNumber:: STW9NK90Z

Brand:: STMicroelectronics - ST | Pack: TO | D/C: 12+

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Products Upload time: 2012-07-29

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Product Summary

The STW9NK90Z is an N-CHANNEL Zener-Protected SuperMESH Power MOSFET. The STW9NK90Z is obtained through an extreme optimization of ST’s well established stripbased PowerMESH. layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. The applications of the STW9NK90Z include high current, high speed switching, switch mode power supplies, DC-AC converters for welding, ups and motor drive.

Parametrics

STW9NK90Z absolute maximum ratings: (1)Drain-source Voltage (VGS = 0), VDS: 900 V; (2)Drain-gate Voltage (RGS = 20 kW), VDGR: 900 V; (3)Gate- source Voltage, VGS: ±30 V; (4)Drain Current (continuous) at TC = 25℃, ID: 8 A; (5)Drain Current (continuous) at TC = 100℃, ID: 5 A; (6)Drain Current (pulsed), IDM: 32 A; (7)Total Dissipation at TC = 25℃, PTOT: 160 W; (8)Derating Factor: 1.28 W/℃; (9)Gate source ESD(HBM-C = 100pF, R = 1.5KW), VESD(G-S): 4 KV; (10)Peak Diode Recovery voltage slope, dv/dt: 4.5 V/ns; (11)Insulation Withstand Voltage (DC), VISO: 2500V; (12)Operating Junction and Storage Temperature, Tj, Tstg: -55 to 150℃.

Features

STW9NK90Z features: (1)Typical RDS(on) = 1.1Ω; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.