Product Summary
The 24C02N is a 2K-bit Electrically Erasable PROM with bondpad positions optimized for smart card applications. The 24C02N is organized as a single block of 256 x 8-bit memory with a two-wire serial interface. The 24C02N also has page-write capability for up to 8 bytes of data.
Parametrics
24C02N absolute maximum ratings: (1)VCC: 7.0V; (2)All inputs and outputs w.r.t. VSS: -0.6V to VCC +1.0V; (3)Storage temperature: -65℃ to +150℃; (4)Ambient temp. with power applied: -65℃ to +125℃; (5)ESD protection on all pads: ≥ 4 kV.
Features
24C02N features: (1)ISO Standard 7816 pad locations; (2)Low power CMOS technology, 1 mA active current typical; 10μA standby current typical at 5.5V; (3)Organized as a single block of 128 bytes (128 x 8) or 256 bytes (256 x 8); (4)Two-wire serial interface bus, I2C compatible; (5)100 kHz and 400 kHz compatibility; (6)Self-timed write cycle (including auto-erase); (7)Page-write buffer for up to 8 bytes; (8)2 ms typical write cycle time for page-write; (9)ESD protection > 4 kV; (10)1,000,000 E/W cycles guaranteed; (11)Data retention > 200 years; (12)Available for extended temperature ranges, Commercial (C): 0℃ to +70℃.
Diagrams
24C00 |
Other |
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Negotiable |
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24C00/P |
Microchip Technology |
EEPROM 16byte 128bit 5V |
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24C00/SN |
Microchip Technology |
EEPROM 16byte 128kb 5V |
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24C00/ST |
Microchip Technology |
EEPROM 16byte 128kb 5V |
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24C00-E/P |
Microchip Technology |
EEPROM 16byte 128kb 5V |
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24C00-E/SN |
Microchip Technology |
EEPROM 16byte 128kb 5V |
Data Sheet |
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