Product Summary
The IPP60R380C6 is a Metal Oxide Semiconductor Field Effect Transistor for high voltage power MOSFET, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS. C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The IPP60R380C6 provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. The applications of the IPP60R380C6 include PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC silverbox, Adapter, LCD & PDP TV, Lighting, server, telecom, UPS and solar.
Parametrics
IPP60R380C6 absolute maximum ratings: (1)Continuous drain current, ID: 6.7 to 10.6A; (2)Pulsed drain current, ID, pulse: 30 A; (3)Avalanche energy, single pulse, EAS: 210 mJ; (4)Avalanche energy, repetitive, EAR: 0.32mJ; (5)Avalanche current, repetitive, IAR: 1.8 A; (6)MOSFET dv/dt ruggedness, dv/dt: 50V/ns; (7)Gate source voltage, VGS: -20 to 20V; (8)Power dissipation, Ptot: 83W; (9)Operating and storage temperature, Tj,Tstg: -55 to 150℃; (10)Mounting torque: 60 Ncm; (11)Continuous diode forward current, IS: 9.2 A; (12)Diode pulse current, IS,pulse: 30 A; (13)Reverse diode dv/dt, dv/dt: 15V/ns; (14)Maximum diode commutation, dif/dt: 500 A/μs.
Features
IPP60R380C6 features: (1)Extremely low losses due to very low FOM RdsonQg and Eoss; (2)Very high commutation ruggedness; (3)Easy to use/drive; (4)JEDEC qualified, Pb-free plating, Halogen free.
Diagrams
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