Product Summary
The IRF9630PBF is a Third generation Power MOSFET from Vishay, provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the IRF9630PBF contribute to its wide acceptance throughout the industry.
Parametrics
IRF9630PBF absolute maximum ratings: (1)Drain-Source Voltage, VDS: -200V; (2)Gate-Source Voltage, VGS: ±20V; (3)Continuous Drain Current VGS at -10 V, TC = 25℃, ID: -6.5A; TC = 100℃, ID: -4.0 A; (4)Pulsed Drain Current, IDM: -26A; (5)Linear Derating Factor: 0.59 W/℃; (6)Single Pulse Avalanche Energy, EAS: 500 mJ; (7)Repetitive Avalanche Currenta, IAR: -6.4 A; (8)Repetitive Avalanche Energya, EAR: 7.4 mJ; (9)Maximum Power Dissipation TC = 25℃, PD: 74 W; (10)Peak Diode Recovery dV/dtc, dV/dt: -5.0 V/ns; (11)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to + 150℃; (12)Soldering Recommendations (Peak Temperature), for 10s: 300℃; (13)Mounting Torque, 6-32 or M3 screw: 10 lbf·in(1.1N·m).
Features
IRF9630PBF features: (1)Dynamic dV/dt Rating; (2)Repetitive Avalanche Rated; (3)P-Channel; (4)Fast Switching; (5)Ease of Paralleling; (6)Simple Drive Requirements; (7)Lead (Pb)-free Available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRF9630PBF |
Vishay/Siliconix |
MOSFET P-Chan 200V 6.5 Amp |
Data Sheet |
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