(Hong Kong)
Product Summary
The IRG4PF50WPBF is an insulated gate bipolar transistor.
Parametrics
IRG4PF50WPBF absolute maximum ratings: (1)Collector-to-Emitter Voltage, VCES: 900 V; (2)Continuous Collector Current, @ TC = 25℃, IC: 51A; (3)Continuous Collector Current, @ TC = 100℃, IC: 28A; (4)Pulsed Collector Current, ICM: 204A; (5)Clamped Inductive Load Current, ILM: 204A; (6)Gate-to-Emitter Voltage, VGE: ±20 V; (7)Maximum Power Dissipation, @ TC = 25℃, PD: 186W; (8)Maximum Power Dissipation, @ TC = 100℃, PD: 78W; (9)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +150℃; (10)Soldering Temperature, for 10 sec: 300 (0.063 in. (1.6mm) from case).
Features
IRG4PF50WPBF features: (1)Optimized for use in welding and switch-mode power supply applications; (2)Industry benchmark srwitching losses improve efficiency of all power supply topologies; (3)50% reduction of Eoff paramenter; (4)Low IGBT conduction losses; (5)Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability; (6)Lead-Free.
Diagrams
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 IRG4PF50WPBF |
International Rectifier |
IGBT Transistors 900V Warp 20-100kHz |
Data Sheet |
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