Product Summary
The IRS2104STRPBF is a high voltage, high speed power MOSFET and IGBT driver with dependent high- and lowside referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The IRS2104STRPBF features a high pulse current buffer stage designed for minimum driver crossconduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates from 10 V to 600 V.
Parametrics
IRS2104STRPBF absolute maximum ratings: (1)High-side floating absolute voltage, VB: -0.3 to 625V; (2)High-side floating supply offset voltage, VS: VB -25 to VB +0.3V; (3)High-side floating output voltage, VHO: VS -0.3 to VB +0.3V; (4)Low-side and logic fixed supply voltage, VCC: -0.3 to 25V; (5)Low-side output voltage, VLO: -0.3 to VCC +0.3V; (6)Logic input voltage (IN & SD), VIN: -0.3 to VCC +0.3V; (7)Allowable offset supply voltage transient, dVs/dt: 50 V/ns; (8)Package power dissipation @ TA ≤ +25℃, (8 lead PDIP), PD: 1.0W; (8 lead SOIC), PD:0.625W; (9)Thermal resistance, junction to ambient, (8 lead PDIP), RthJA: 125℃/W; (8 lead SOIC), RthJA: 200℃/W; (10)Junction temperature, TJ: 150℃; (11)Storage temperature, TS: -55 to 150℃; (12)Lead temperature (soldering, 10 seconds), TL: 300℃.
Features
IRS2104STRPBF features: (1)Floating channel designed for bootstrap operation; (2)Fully operational to +600 V; (3)Tolerant to negative transient voltage, dV/dt immune; (4)Gate drive supply range from 10 V to 20 V; (5)Undervoltage lockout; (6)3.3 V, 5 V, and 15 V input logic compatible; (7)Cross-conduction prevention logic; (8)Internally set deadtime; (9)High-side output in phase with input; (10)Shutdown input turns off both channels; (11)Matched propagation delay for both channels; (12)RoHS compliant.
Diagrams
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