(Hong Kong)
Product Summary
The PUMD6 is a resistor-equipped transistor in an SC-88 (SOT363) plastic package. The applications of the PUMD6 include Especially suitable for space reduction in interface and driver circuits, Inverter circuit configurations without use of external resistors.
Parametrics
PUMD6 absolute maximum ratings: (1)collector-base voltage open emitter, VCBO: 50 V; (2)collector-emitter voltage open base, VCEO: 50 V; (3)emitter-base voltage open collector, VEBO: 10 V; (4)input voltage, positive, VI: +40 V; negative, VI: -10 V; (5)output current (DC), IO: 100 mA; (6)peak collector current, ICM: 100 mA; (7)total power dissipation Tamb ≤ 25℃, Ptot: 200 mW; (8)storage temperature, Tstg: -65 to +150℃; (9)junction temperature, Tj: 150℃; (10)operating ambient temperature, Tamb: -65 to +150℃; (11)total power dissipation Tamb ≤ 25℃, Ptot: 300 mW.
Features
PUMD6 features: (1)Transistors with different polarity, each with a built-in bias resistor R1 (typ. 4.7 kW); (2)No mutual interference between the transistors; (3)Simplification of circuit design; (4)Reduces number of components and board space.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 PUMD6 |
Other |
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Data Sheet |
Negotiable |
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PUMD6 T/R |
NXP Semiconductors |
Transistors Switching (Resistor Biased) TRNS DOUBL RET TAPE7 |
Data Sheet |
Negotiable |
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PUMD6,115 |
NXP Semiconductors |
Transistors Switching (Resistor Biased) TRNS DOUBL RET TAPE7 |
Data Sheet |
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PUMD6,125 |
NXP Semiconductors |
Transistors Switching (Resistor Biased) TransDigital BJT NPN PNP 50V 100mA 6-Pin |
Data Sheet |
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PUMD6,135 |
NXP Semiconductors |
Transistors Switching (Resistor Biased) NPN/PNP RESISTOR EQUIPPED TRANSISTOR |
Data Sheet |
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