AD834JRZ-R7

AD834JRZ-R7, SOP, 500 MHz four-quadrant multiplier, 18 V, 500 mW

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Price:: US $0.15~2.40 / piece [Get Latest Price]

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	US $0.15~2.40

PartNumber:: AD834JRZ-R7

Brand:: Analog Devices - ADI | Pack: SOP | D/C: 12+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-10-09

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Product Summary

The AD834JRZ-R7 is a monolithic, laser-trimmed four-quadrant analog multiplier intended for use in high frequency applications, with a transconductance bandwidth (RL = 50Ω) in excess of 500 MHz from either of the differential voltage inputs. In multiplier modes, the typical total full-scale error is 0.5%, dependent on the application mode and the external circuitry. Performance is relatively insensitive to temperature and supply variations due to the use of stable biasing based on a band gap reference generator and other design features. The AD834JRZ-R7, available in 8-lead PDIP and plastic SOIC packages, is specified over the commercial temperature range of 0°C to 70°C. The AD834JRZ-R7 is also available in 8-lead CERDIP and plastic SOIC packages operating over the industrial temperature range of -40°C to +85°C. The AD834JRZ-R7 can be applied in high speed real time computation, wideband modulation and gain control, signal correlation and RF power measurement, voltage controlled filters and oscillators, linear keyers for high resolution television, and wideband true RMS.

Parametrics

AD834JRZ-R7 absolute maximum ratings: (1)Supply Voltage (+VS to -VS): 18 V; (2)Internal Power Dissipation: 500 mW; (3)Input Voltages (X1, X2, Y1, Y2): +VS; (4)Storage Temperature Range (Q): -65°C to +150°C; (5)Storage Temperature Range (R, N): -65°C to +125°C; (6)Lead Temperature (Soldering, 60 sec): 300°C; (7)ESD Rating: 500 V.

Features

AD834JRZ-R7 features: (1)DC to >500 MHz operation; (2)Differential ±1 V full-scale inputs; (3)Differential ±4 mA full-scale output current; (4)Low distortion (≤0.05% for 0 dBm input); (5)Supply voltages from ±4 V to ±9 V; (6)Low power (280 mW typical at VS =±5 V).