Product Summary
The SPW32N50C3 is a cool MOS power transistor.
Parametrics
SPW32N50C3 absolute maximum ratings: (1)Continuous drain current, TC = 25℃, ID: 32A; TC = 100℃, ID: 20A; (2)Pulsed drain current, tp limited by Tjmax, IDpuls: 96A; (3)Avalanche energy, single pulse, ID = 10A, VDD = 50V, EAS: 1100mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax2), ID = 20A, VDD = 50V, EAR: 1mj; (5)Avalanche current, repetitive tAR limited by Tjmax, IAR: 20A; (6)Gate source voltage, VGS: ±20 V; (7)Gate source voltage AC (f >1Hz), VGS: ±30V; (8)Power dissipation, TC = 25℃, Ptot: 284W; (9)Operating and storage temperature, Tj, Tstg: -55 to +150℃.
Features
SPW32N50C3 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)Ultra low effective capacitances; (6)Improved transconductance.
Diagrams
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![]() Infineon Technologies |
![]() MOSFET COOL MOS N-CH 560V 32A |
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![]() Infineon Technologies |
![]() MOSFET COOL MOS N-CH 560V 32A |
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![]() SPW35N60C3 |
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![]() MOSFET COOL MOS PWR TRANS MAX PWR 650V |
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![]() SPW35N60CFD |
![]() Infineon Technologies |
![]() MOSFET COOL MOS N-CH 600V 34.1A |
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