(Hong Kong)
Product Summary
The TK10A60D is a TOSHIBA Field Effect Transistor.
Parametrics
TK10A60D absolute maximum ratings: (1)Drain-source voltage, VDSS: 600 V; (2)Drain-gate voltage (RGS = 20 kΩ), VDGR: 600 V; (3)Gate-source voltage, VGSS: ±30 V; (4)Drain current, DC, ID: 10A; Pulse (t = 1 ms), IDP: 40A; (5)Drain power dissipation (Tc = 25℃), PD: 45 W; (6)Single pulse avalanche energy, EAS: 363 mJ; (7)Avalanche current, IAR: 10 A; (8)Repetitive avalanche energy, EAR: 4.5 mJ; (9)Channel temperature, Tch: 150℃; (10)Storage temperature range, Tstg: -55 to 150℃.
Features
TK10A60D features: (1)Low drain-source ON-resistance: RDS (ON) = 0.62 Ω(typ.); (2)High forward transfer admittance: |Yfs| = 6.0 S (typ.); (3)Low leakage current: IDSS = 10μA (VDS = 600 V); (4)Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA).
Diagrams
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 TK10A60D(Q,M) |
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MOSFET N-CH 600V 10A TO220SIS |
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TK10A60D(STA4,Q,M) |
Toshiba |
MOSFET MOSFET N-ch 600V 10A |
Data Sheet |
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